1 of 8 optimum technology matching? applied gaas hbt ingap hbt gaas mesfet sige bicmos si bicmos sige hbt gaas phemt si cmos si bjt gan hemt functional block diagram rf micro devices?, rfmd?, optimum technology matching?, enabling wireless connectivity?, powerstar?, polaris? total radio? and ultimateblue? are trademarks of rfmd, llc. bluetooth is a trade- mark owned by bluetooth sig, inc., u.s.a. and licensed for use by rfmd. all other trade names, trademarks and registered tradem arks are the property of their respective owners. ?2006, rf micro devices, inc. product description 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . ordering information rf mems ldmos vbat bias control & pa/v mode enable rf out rf in vmode1 ven vmode0 vcc cpl in cpl out gnd 5 4 1 2 3 6 7 10 9 8 RF7234 3v td-scdma/w-cdma linear pa module band 1 and 1880mhz to 2025mhz the RF7234 is a high-power, high-efficiency, linear power amplifier designed for use as the final rf amplifier in 3v, 50 ? td-scdma mobile cellular equipment and spread-spectrum systems. this pa is developed for td-scdma 1880mhz to 1920mhz and 2010mhz to 2025mhz frequency band, plus w-cdma band 1. the RF7234 has two digital control pins to select one of three power modes to optimize performance and current drain at lower power levels. the part also has an integrated directional coupler which eliminates the need for an external discrete coupler at the output. the RF7234 is fully td-scd ma/w-cdma/hsdpa-compliant and is assembled in a 10-pin, 3mmx3mm module. features ? td-scdma and hsdpa com- pliant ? low voltage positive bias supply (3.4v to 4.2v) ? +28dbm linear output power w-cdma (+26.5dbm hsdpa) ? +27.5dbm output power td-scdma ? high efficiency operation 35% at p out =+27.5dbm (td-scdma) ? 20% at p out =+19.0dbm (without dc/dc converter) ? low quiescent current in low power mode: 17ma ? internal voltage regulator eliminates the need for exter- nal reference voltage (v ref ) ? 3-mode power states with digital control interface ? supports dc/dc converter operation ? integrated power coupler ? integrated blocking and col- lector decoupling capacitors applications ? td-scdma/hsdpa/w-cdma wireless handsets and data cards ? dual-mode umts wireless handsets RF7234 3v td-scdma/w-cdma linear pa module band 1 and 1880mhz to 2025mhz RF7234pcba-410 fully assembled evaluation board ds100427 ? package style: module, 10-pin, 3mmx3mmx1.0mm
2 of 8 RF7234 ds100427 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . absolute maximum ratings parameter rating unit supply voltage in standby mode 6.0 v supply voltage in idle mode 6.0 v supply voltage in operating mode, 50 ? load 6.0 v supply voltage, v bat 6.0 v control voltage, vmode0, vmode1 3.5 v control voltage, v en 3.5 v rf - input power +6 dbm rf - output power +30 dbm output load vswr (ruggedness) 10:1 operating ambient temperature -30 to +110 c storage temperature -55 to +150 c parameter specification unit condition min. typ. max. recommended operating conditions t=25c, v cc =v batt =3.4v, v en =1.8v, 50 ? , td-scdma or w-cdma-gtc1 modulation, unless otherwise specified. operating frequency range 1880 1920 mhz td-scdma 1920 1980 mhz w-cdma 2010 2025 hz td-scdma v bat +3.2 1 +3.4 +4.2 v v cc +3.2 1 +3.4 +4.2 v v en 0 0.5 v pa disabled. 1.4 1.8 3.0 v pa enabled. v mode0 , v mode1 0 0.5 v logic ?low?. 1.4 1.8 3.0 v logic ?high?. p out maximum linear output (hpm) 28 2 dbm high power mode w-cdma (hpm) maximum linear output (hpm) 27.5 2 dbm high power mode (hpm) td-scdma maximum linear output (mpm) 19.0 2 dbm medium power mode (mpm) maximum linear output (lpm) 8.0 2 dbm low power mode (lpm) ambient temperature -25 +25 +85 c notes: 1 minimum v cc for max p out is indicated. v cc down to 0.5 v may be used for backed-off power when using dc/dc converter to conserve battery current. 2 for operation at below v cc =3.4v, derate p out by 1.0db. caution! esd sensitive device. exceeding any one or a combination of the absolute maximum rating conditions may cause permanent damage to the device. extended application of absolute maximum rating conditions to the device may reduce device reliability. specified typical perfor- mance or functional operation of the devi ce under absolute maximum rating condi- tions is not implied. rohs status based on eudirective2002/95/ec (at time of this document revision). the information in this publication is believed to be accurate and reliable. however, no responsibility is assumed by rf micro devices, inc. ("rfmd") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended appli- cation circuitry and specifications at any time without prior notice.
3 of 8 RF7234 ds100427 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . parameter specification unit condition min. typ. max. electrical specifications - w-cdma t=+25 ? c, v cc =v bat =+3.4v, v en =+1.8v, 50 ? , w-cdma modulation unless otherwise specified. gain 25 26.5 db hpm, p out =28.0dbm, w-cdma 15 17.5 db mpm, p out ? 19.0dbm 11 1 14.5 db lpm, p out ? 8.0dbm gain linearity 0.2 db hpm, 19.0dbm ? p out ? 28.0dbm aclr - 5mhz offset -40 dbc hpm, p out =28.0dbm -46 dbc mpm, p out =19.0dbm -44 dbc lpm, p out =8.0dbm aclr - 10mhz offset -55 dbc hpm, p out =28.0dbm -60 dbc mpm, p out =19.0dbm -64 dbc lpm, p out =8.0dbm pae without dc/dc converter 40 % hpm, p out =28.0dbm 20 % mpm, p out =19.0dbm current drain 80 ma mpm, p out =16.0dbm 37 ma lpm, p out =8.0dbm 20 ma lpm, p out =0.0dbm quiescent current 85 ma hpm, dc only 20 ma mpm, dc only 17 ma lpm, dc only enable current 0.3 1.0 ma source or sink current. v en =1.8v. mode current (i mode0 , i mode1 ) 0.3 1.0 ma source or sink current. v mode0 , v mode1 =1.8v. leakage current 1.0 10.0 ? a dc only. v cc =v bat =3.7v, v en =v mode0 =v mode1 =0.5v. input impedance 2.0:1 vswr no ext. matching, p out ? 28dbm, all modes. harmonic, 2fo -28 dbm p out ? 28.0dbm harmonic, 3fo -35 dbm p out ? 28.0dbm spurious output level -70 dbc all spurious, p out ? 28dbm, all conditions, load vswr ? 6:1, all phase angles. insertion phase shift -30 +30 phase shift at 19dbm when switching from hpm to mpm and mpm to lpm at 8dbm. dc enable time 10 ? s dc only. time from v en =high to stable idle cur- rent (90% of steady state value). rf rise/fall time 6 ? sp out ? 28.0dbm, all modes. 90% of target, dc settled prior to rf. coupling factor -19.5 db p out ? 28.0dbm, all modes. coupling accuracy - temp/voltage 0.5 db p out ? 28.0dbm, all modes. -30c ? t ? 85c, 3.0v ? v cc & v bat ? 4.2v, referenced to 25c, 3.4v conditions. coupling accuracy - vswr 0.5 db p out ? 28dbm, all modes, load vswr=2:1, 0.5db accuracy corresponds to 15db direc- tivity. note: 1 excludes dc/dc converter operation. gain may be lower when using dc/dc converter to conserve battery current. note: 2 unless otherwise marked , each spec is equivalent for w-cdma or td-scdma operation.
4 of 8 RF7234 ds100427 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . parameter specification unit condition min. typ. max. electrical specifications - td-scdma t=+25 ? c, v cc =v bat =+3.4v, v en =+1.8v, 50 ? , td-scdma modulation unless otherwise specified. gain 26.5 db hpm, p out =27.5dbm 15 17.5 db mpm, p out ? 19.0dbm 11 1 14.5 db lpm, p out ? 8.0dbm gain linearity 0.2 db hpm, 19.0dbm ? p out ? 27.5 dbm aclr - 1.6mhz offset -40 dbc hpm, p out =27.5dbm -42 dbc mpm, p out =19.0dbm -42 dbc lpm, p out =8.0dbm aclr - 3.2mhz offset -56.0 -57.5 dbc hpm, p out =27.5dbm -60 dbc mpm, p out =19.0dbm -63 dbc lpm, p out =8.0dbm pae without dc/dc converter 35 % hpm, p out =27.5dbm 20 % mpm, p out =19.0dbm 4.5 % lpm, p out =8.0dbm current drain 425 ma hbm, p out =27.5dbm (during active timeslot) 120 ma lpm, p out =19dbm (during active timeslot) 40 ma lpm, p out =8.0dbm (during active timeslot) quiescent current 85 ma hpm, dc only 20 ma mpm, dc only 17 ma lpm, dc only enable current 0.3 1.0 ma source or sink current. v en =1.8v. mode current (i mode0 , i mode1 ) 0.3 1.0 ma source or sink current. v mode0 , v mode1 =1.8v. leakage current 1.0 10.0 ? a dc only. v en =v mode0 =v mode1 =0.5v. input impedance 2.0:1 vswr no ext. matching, p out ? 27dbm, all modes. harmonic, 2fo -28 dbm p out ? 27.5 dbm, hpm. harmonic, 3fo -35 dbm p out ? 27.5 dbm, hpm. sem margin 3 db p out =27.5dbm, hpm spurious output level -70 dbc all spurious, p out ? 27.5dbm, all conditions, load vswr ? 6:1, all phase angles. insertion phase shift -30 +30 phase shift at 19dbm when switching from hpm to mpm and mpm to lpm at 8dbm. dc enable time 10 ? s dc only. time from v en =high to stable idle cur- rent (90% of steady state value). rf rise/fall time 6 ? sp out ? 27.5dbm, all modes. 90% of target, dc settled prior to rf. coupling factor -19.5 db p out ? 27.5dbm, all modes. coupling accuracy - temp/voltage 0.5 db p out ? 27.5dbm, all modes. -25c ? t ? 85c. see w-cdma condition notes. coupling accuracy - vswr 0.5 db p out ? 27.5dbm, all modes, load vswr=2:1. evm 1.8 % p out =27.5dbm, v cc =3.4v note: 1 excludes dc/dc converter operation. gain may be lower when using dc/dc converter to conserve battery current. note: 2 unless otherwise marked , each spec is equivalent for w-cdma or td-scdma operation.
5 of 8 RF7234 ds100427 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . package drawing pin function description 1vbat supply voltage for bias circuitry and the first stage amplifier. 2rf in rf input internally matched to 50 ? and dc blocked. 3vmode1 digital control input for power mode selection (see operating modes truth table). 4vmode0 digital control input for power mode selection (see operating modes truth table). 5ven digital control input for pa enable and disable (see operating modes truth table). 6cpl_out coupler output. 7gnd this pin must be grounded. 8cpl_in coupler input used for cascading couplers in series. terminate this pin with a 50 ? resistor if not connected to another coupler. 9rf out rf output internally matched to 50 ?? and dc blocked. 10 vcc supply voltage for the second stage amplifier which can be connected to battery supply or output of dc-dc con- verter. pkg base gnd ground connection. the package backside should be soldered to a topside ground pad connecting to the pcb ground plane with multiple ground vias. the pad should have a low thermal resistance and low electrical imped- ance to the ground plane. v en v mode0 v mode1 v bat v cc conditions/comments low low low 3.4v to 3.8v 3.4v to 3.8v power down mode low x x 3.4v to 3.8v 3.4v to 3.8v standby mode high low low 3.4v to 3.8v 3.4v to 3.8v high power mode high high low 3.4v to 3.8v 3.4v to 3.8v medium power mode high high high 3.4v to 3.8v 3.4v to 3.8v low power mode high high high 3.4v to 3.8v ? 0.5v optional lower v cc in low power mode
6 of 8 RF7234 ds100427 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . preliminary application schematic v bat vmode1 vmode0 ven c11 2 10nf c10 2 10nf c9 2 10nf c7 2 10nf c5 4.7uf v cc c8 2 10nf c6 4.7uf c4 22uf notes: 1 vcc and vbat are connected together if dc-dc converter is not used. 2 place these capacitors as close to pa as possible. 3 50 ? resistor will be remo ved if pin 8 is connected to another coupler. j2 rf out j3 cpl out j1 rf in bias control & pa/v mode enable 5 4 1 2 3 6 7 10 9 8 r2 3 50 ? p1 1 2 3 4 5 6 7 8 9 con9 p1-3 vmode0 gnd p1-2 ven p1-4 vmode1 p1-5 vcc1 gnd p1-7 vcc2 p1-8 vcc2s gnd
7 of 8 RF7234 ds100427 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . pcb design requirements pcb surface finish the pcb surface finish used for rfmd's qualification process is electroless nickel, immersion gold. typical thickness is 3 ? inch to 8 ? inch gold over 180 ? inch nickel. pcb land pattern recommendation pcb land patterns for rfmd components are based on ipc-735 1 standards and rfmd empirical data. the pad pattern shown has been developed and tested for optimized assembly at rf md. the pcb land pattern has been developed to accommodate lead and package tolerances. since surface mount processes va ry from company to company, careful process development is recommended. pcb metal land pattern figure 1. pcb metal land pattern (top view)
8 of 8 RF7234 ds100427 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . pcb solder mask pattern liquid photo-imageable (lpi) solder mask is recommended. the solder mask footprint will match what is shown for the pcb metal land pattern with a 2mil to 3mil expansion to accommodate solder mask registration clearance around all pads. the center-grounding pad shall also have a sold er mask clearance. expansion of the pads to create solder mask clearance can be provided in the master data or reques ted from the pcb fabrication supplier. thermal pad and via design the pcb land pattern has been designed with a thermal pad th at matches the die paddle size on the bottom of the device. thermal vias are required in the pcb layout to effectively conduct heat away from the package. the via pattern has been designed to address thermal, power dissipa tion and electrical requirements of the device as well as accommodating routing strategies. the via pattern used for the rfmd qualification is based on th ru-hole vias with 0.203mm to 0.330mm finished hole size on a 0.5mm to 1.2mm grid pattern with 0.025mm pl ating on via walls. if micro vias are used in a design, it is suggested that the quantity of vias be increased by a 4:1 ratio to achieve similar results. figure 2. pcb solder mask pattern (top view)
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